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半導(dǎo)體學(xué)報(bào)

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半導(dǎo)體學(xué)報(bào)

半導(dǎo)體學(xué)報(bào)

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期刊周期:月刊
期刊級(jí)別:學(xué)報(bào)
國(guó)內(nèi)統(tǒng)一刊號(hào):11-5781/TN
國(guó)際標(biāo)準(zhǔn)刊號(hào):1674-4926
主辦單位:中國(guó)科學(xué)院半導(dǎo)體研究所;中國(guó)電子學(xué)會(huì)
主管單位:中國(guó)科學(xué)院
上一本期雜志:《經(jīng)濟(jì)地理》雜志社
下一本期雜志:《中國(guó)個(gè)體防護(hù)裝備》科技類雜志

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  期刊簡(jiǎn)介:《半導(dǎo)體學(xué)報(bào)》是中國(guó)電子學(xué)會(huì)和中國(guó)科學(xué)院半導(dǎo)體研究所主辦的學(xué)術(shù)刊物。它報(bào)道半導(dǎo)體物理學(xué)、半導(dǎo)體科學(xué)技術(shù)和相關(guān)科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進(jìn)展,內(nèi)容包括半導(dǎo)體超晶格和微結(jié)構(gòu)物理,半導(dǎo)體材料物理,包括量子點(diǎn)和量子線等材料在內(nèi)的新型半導(dǎo)體材料的生長(zhǎng)及性質(zhì)測(cè)試,半導(dǎo)體器件物理,新型半導(dǎo)體器件,集成電路的CAD設(shè)計(jì)和研制,新工藝,半導(dǎo)體光電子器件和光電集成,與半導(dǎo)體器件相關(guān)的薄膜生長(zhǎng)工藝,性質(zhì)和應(yīng)用等等。本刊與物理類期刊和電子類期刊不同,是以半導(dǎo)體和相關(guān)材料為中心的,從物理,材料,器件到應(yīng)用的,從研究到技術(shù)開(kāi)發(fā)的,跨越物理和信息兩個(gè)學(xué)科的綜合性學(xué)術(shù)刊物。《半導(dǎo)體學(xué)報(bào)》發(fā)表中、英文稿件。《半導(dǎo)體學(xué)報(bào)》被世界四大檢索系統(tǒng)(美國(guó)工程索引(EI),化學(xué)文摘(CA),英國(guó)科學(xué)文摘(SA),俄羅斯文摘雜志(РЖ))收錄。
《半導(dǎo)體學(xué)報(bào)》1980年創(chuàng)刊。現(xiàn)為月刊,每期190頁(yè)左右,國(guó)內(nèi)外公開(kāi)發(fā)行。每期均有英文目次,每篇中文論文均有英文摘要。《半導(dǎo)體學(xué)報(bào)》主編為王守武院士。主要讀者對(duì)象是從事半導(dǎo)體科學(xué)研究、技術(shù)開(kāi)發(fā)、生產(chǎn)及相關(guān)學(xué)科的科技人員、管理人員和大專院校的師生。

  期刊欄目:研究快報(bào)、研究論文、研究簡(jiǎn)報(bào)、技術(shù)進(jìn)展等。

  期刊收錄:

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90年獲中科院優(yōu)秀期刊二等獎(jiǎng)
92年獲國(guó)家科委、中共中央宣傳部和國(guó)家新聞出版署全國(guó)優(yōu)秀期刊評(píng)比三等獎(jiǎng)
97年國(guó)家科委、中共中央中宣傳部和國(guó)家新出版署三等獎(jiǎng)
中國(guó)期刊方陣“雙效”期刊
國(guó)外數(shù)據(jù)庫(kù)收錄:俄羅斯文摘雜志、美國(guó)化學(xué)文摘、英國(guó)物理學(xué)、電技術(shù)、計(jì)算機(jī)及控制信息社數(shù)據(jù)庫(kù)





  半導(dǎo)體學(xué)報(bào)最新期刊目錄

A cryogenic 3.3-V supply, 1.6% 3σ-accuracy all-CMOS voltage reference with 58-dB PSR@10 kHz in 0.18-μm CMOS

摘要:This brief presents a cryogenic voltage reference circuit designed to operate effectively across a wide temperature range from 30 to 300 K. A key feature of the proposed design is utilizing a current ...

Effect of grain size on the resistivity of polycrystalline 3C-SiC

摘要:Silicon carbide offers distinct advantages in the field of power electronic devices. However, manufacturing processes remain a significant barrier to its widespread adoption. Polycrystalline SiC is le...

Investigating the doping performance of an ionic dopant for organic semiconductors and thermoelectric applications

摘要:Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs) for advanced optoelectronic and thermoelectric applications. In this study, we systematically investigated the ...

A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform

摘要:<正>With the rapid development of information technology,the demand for high-performance and low-power microprocessors continues to grow. Traditional silicon-based semiconductor technologies have...

Topological materials-based photodetectors from the infrared to terahertz range

摘要:Infrared and terahertz waves constitute pivotal bands within the electromagnetic spectrum, distinguished by their robust penetration capabilities and non-ionizing nature. These wavebands offer the pot...

A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process

摘要:In this paper, a high-gain inductorless LNA(low-noise amplifier) compatible with multiple communication protocols from 0.1 to 5.1 GHz is proposed. A composite resistor-capacitor feedback structure is ...

Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects

摘要:Besides the common short-channel effect(SCE) of threshold voltage(Vth) roll-off during the channel length(L) downscaling of In GaZnO(IGZO) thin-film transistors(TFTs), an opposite Vth<...

A semiconductor radiation dosimeter fabricated in 8-inch process

摘要:The radiation-sensitive field effect transistors(RADFET) radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS) transistor...

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

摘要:A 4H-SiC superjunction(SJ) MOSFET(SJMOS) with integrated high-K gate dielectric and split gate(HKSG-SJMOS) is proposed in this paper. The key features of HKSG-SJMOS involve the utilization of high-K(H...

Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application

摘要:In this study, we present the fabrication of vertical SnO/β-Ga2O3 heterojunction diode(HJD) via radio frequency(RF)reactive magnetron sputtering. The valence and conduction band ...

Multi-chip multi-phase DC-DC converters for AI power: a ring,a chain,or a net,independent or master-slave?

摘要:<正>Motivation. As artificial intelligence(AI) workloads escalate exponentially, ultra-thin, high-efficiency voltage regulator modules(VRMs) with exceptional power density become essential for ba...

Trends and emerging techniques in isolated power converters

摘要:<正>Isolated power converters have emerged as an active research topic in power integrated circuit(IC) design. Reflecting this growing interest, ISSCC 2025 has featured a dedicated session on "Is...

Broadband photoluminescence and nonlinear chiroptical properties in chiral 2D halide perovskites

摘要:Two-dimensional(2D) chiral halide perovskites(CHPs) have attracted broad interest due to their distinct spin-dependent properties and promising applications in chiroptics and spintronics. Here, we rep...

Growth and optical properties of large-sized Co2+:ZnGa2O4 single crystal

摘要:The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions, and is expected to work in a passively Q-switched solid-state laser a...

Green perovskite CsPbBr3 light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

摘要:The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry. In this work we present an approach to fabricating a flexible green perovsk...

Progress and trends of low-jitter fractional-N PLL

摘要:<正>Fractional-N phase-locked loops (PLLs) are widely deployed in high-speed communication systems to generate local oscillator (LO) or clock signals with precise frequency. To support sophistica...

High-precision ADC design techniques in ISSCC 2025

摘要:<正>High-precision analog-to-digital converters(ADCs) serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence. They find ubiquitous ap...

Review on three-dimensional graphene: synthesis and joint photoelectric regulation in photodetectors

摘要:Graphene has garnered significant attention in photodetection due to its exceptional optical, electrical, mechanical,and thermal properties. However, the practical application of two-dimensional(2D) g...

Reconfigurable devices based on two-dimensional materials for logic and analog applications

摘要:In recent years, as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristi...

A simple and effective carrier lifetime characterization for semiconductor thin films

摘要:Minority carrier lifetimes τ are a fundamental parameter in semiconductor devices, representing the average time it takes for excess minority carriers to recombine. This characteristic is crucial for ...

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